R. Desrosiers, J. Cowles, C. Hornbuckle, A. Gutierrez-Aitken, J. Becker
{"title":"Monolithic 14 GHz wideband InP HBT BPSK modulator","authors":"R. Desrosiers, J. Cowles, C. Hornbuckle, A. Gutierrez-Aitken, J. Becker","doi":"10.1109/GAAS.1998.722648","DOIUrl":null,"url":null,"abstract":"This paper presents the first reported monolithic InP HBT BPSK modulator capable of >3 Gsps data rates on a 14 GHz carrier. The MMIC, consisting of a digital modulation driver and a diode mixer, was fabricated using TRW's 75 GHz f/sub t/ InP HBT MMIC process. The use of InP based devices for the mixer and driver circuits results in a 2/spl times/ decrease in power consumption compared with equivalent GaAs HBT circuits. The successful integration of traditional microwave and digital circuits demonstrates the versatility of InP HBTs as a high frequency, low power mixed-mode technology.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents the first reported monolithic InP HBT BPSK modulator capable of >3 Gsps data rates on a 14 GHz carrier. The MMIC, consisting of a digital modulation driver and a diode mixer, was fabricated using TRW's 75 GHz f/sub t/ InP HBT MMIC process. The use of InP based devices for the mixer and driver circuits results in a 2/spl times/ decrease in power consumption compared with equivalent GaAs HBT circuits. The successful integration of traditional microwave and digital circuits demonstrates the versatility of InP HBTs as a high frequency, low power mixed-mode technology.
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