A Comprehensive SoC Design Methodology for Nanometer Design Challenges

R. Kumar, R. Bedi, R. Rajagopal, N. Guruprasad, K. Subbarangaiah, Taher Abbasi, D. V. R. Murthy, P. K. Prasad, D. R. Gude
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引用次数: 1

Abstract

Summary form only for tutorial. SoC design methodologies are under constant revision due to adoption of fast shrinking process technologies at nanometer levels. Nanometer process geometries exhibit new complex design challenges in silicon which were not seen in higher geometries. This tutorial highlights nanometer chip design challenges and recommends a tool independent design flow which meets the current trends. Covered are ASIC synthesis concepts along with integrated design for testability flow. The focus here is on different approaches to address the convergence challenges during synthesis along with some of the key design optimizations and transformations which would directly impact quality of results (QoR) post P&R. Verification methodology is also discussed. New verification languages and structural tools for linting and code coverage, latest trends in functional verification from the methodology and technology perspective are covered. Also new verification methodology that identifies and provides definition of metrics for functional coverage is reviewed.
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面向纳米设计挑战的综合SoC设计方法
仅供教程使用的摘要表单。由于采用纳米级快速收缩工艺技术,SoC设计方法正在不断修订。纳米工艺几何在硅中表现出新的复杂设计挑战,这在更高的几何中没有看到。本教程重点介绍了纳米芯片设计的挑战,并推荐了一种符合当前趋势的工具独立设计流程。涵盖了ASIC合成概念以及可测试性流程的集成设计。这里的重点是在综合过程中解决收敛挑战的不同方法,以及一些直接影响P&R后结果质量(QoR)的关键设计优化和转换。并讨论了验证方法。新的验证语言和结构工具用于检查和代码覆盖,从方法论和技术的角度来看,功能验证的最新趋势也被涵盖。此外,还审查了识别并提供功能覆盖度量标准定义的新验证方法。
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