A novel approach of modeling channel potential for Gate All Around nanowire transistor

Abstract

A compact, physical surface potential model for undoped Gate All Around (GAA) MOSFETs has been derived based on a novel analytical solution of the 3-D Poisson equation with the mobile charge term included. The new model is verified by published numerical simulator, Silvaco Device simulator Atlas with close agreement. Applying the newly developed model, the channel potential versus gate voltage characteristics for the devices having equal body diameter but different thickness pass through a single common point (termed as “crossover point”). A comparative study of between analytical and numerical solutions has been presented.