ANN-based-modling to study the Neutron radiation effects on MOS devices

Abstract

In this work, a MOS devices model based on the artificial neural network (ANN) is proposed. This model is designed in order to use it in the neutron radiation effects. It allows us to infer several information about neutrons such as angle $\theta$, fluence, drain source voltage (Vds), voltage between the drain and source, (Vgs) voltage between the gate and source, (Ids) current between the drain and source and the temperature. the results achieved are similar with the experimental results of the literature.