T. Umeda, Y. Hirano, D. Suzuki, A. Tone, T. Inoue, H. Kikuchihara, M. Miura-Mattausch, H. Mattausch
{"title":"Compact modeling and parameter extraction strategy of normally-on MOSFET","authors":"T. Umeda, Y. Hirano, D. Suzuki, A. Tone, T. Inoue, H. Kikuchihara, M. Miura-Mattausch, H. Mattausch","doi":"10.1109/ICMTS.2015.7106103","DOIUrl":null,"url":null,"abstract":"The additional channel-dopant layer of normally-on MOSFETs leads to accumulation-layer current near channel surface and deeper-lying neutral-region current above the p/n junction, which dominate bias conditions above and below flat-band, respectively. The developed compact model accurately captures these currents and exploits their different bias-condition properties for efficient parameter extraction.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"266 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The additional channel-dopant layer of normally-on MOSFETs leads to accumulation-layer current near channel surface and deeper-lying neutral-region current above the p/n junction, which dominate bias conditions above and below flat-band, respectively. The developed compact model accurately captures these currents and exploits their different bias-condition properties for efficient parameter extraction.
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