Analog IC Aging-induced Degradation Estimation via Heterogeneous Graph Convolutional Networks

Tinghuan Chen, Qi Sun, Canhui Zhan, Changze Liu, Huatao Yu, Bei Yu
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引用次数: 4

Abstract

With continued scaling, transistor aging induced by Hot Carrier Injection and Bias Temperature Instability causes a gradual failure of nanometer-scale integrated circuits (ICs). In this paper, to characterize the multi-typed devices and connection ports, a heterogeneous directed multigraph is adopted to efficiently represent analog IC post-layout netlists. We investigate a heterogeneous graph convolutional network (H-GCN) to fast and accurately estimate aging-induced transistor degradation. In the proposed H-GCN, an embedding generation algorithm with a latent space mapping method is developed to aggregate information from the node itself and its multi-typed neighboring nodes through multi-typed edges. Since our proposed H-GCN is independent of dynamic stress conditions, it can replace static aging analysis. We conduct experiments on very advanced 5nm industrial designs. Compared to traditional machine learning and graph learning methods, our proposed H-GCN can achieve more accurate estimations of aging-induced transistor degradation. Compared to an industrial reliability tool, our proposed H-GCN can achieve 24.623× speedup on average.
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基于异构图卷积网络的模拟IC老化退化估计
随着尺度的不断扩大,热载流子注入和偏置温度不稳定性引起的晶体管老化导致纳米级集成电路(ic)逐渐失效。为了描述多类型器件和连接端口,本文采用异构有向多图来有效地表示模拟IC布局后的网络列表。我们研究了一种异构图卷积网络(H-GCN)来快速准确地估计老化引起的晶体管退化。在本文提出的H-GCN中,提出了一种基于潜在空间映射的嵌入生成算法,通过多类型边聚合节点本身及其多类型相邻节点的信息。由于我们提出的H-GCN不受动应力条件的影响,可以代替静态老化分析。我们在非常先进的5nm工业设计上进行实验。与传统的机器学习和图学习方法相比,我们提出的H-GCN可以更准确地估计老化引起的晶体管退化。与工业可靠性工具相比,我们提出的H-GCN平均可以实现24.623倍的加速。
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