{"title":"A low-voltage wide-swing FGMOS current amplifier","authors":"K. Moolpho, J. Ngarmnil, K. Nandhasri","doi":"10.1109/ISCAS.2002.1010542","DOIUrl":null,"url":null,"abstract":"This paper proposes a new current amplifier circuit totally formed in the class AB structure utilizing CMOS inverters and the recently proposed additive analog inverter using floating-gate MOSFETs. Operating in a negative feedback topology, the amplifier can deal with wide signal swings up to /spl plusmn/200 /spl mu/A, with 1% of the THD and 10 pF of C/sub L/. Designs and HSPICE simulation results are demonstrated on 0.5 /spl mu/m double poly CMOS processes with 1.5 V and 1 V power supplies to indicate high frequency and low power capabilities respectively.","PeriodicalId":203750,"journal":{"name":"2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2002.1010542","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper proposes a new current amplifier circuit totally formed in the class AB structure utilizing CMOS inverters and the recently proposed additive analog inverter using floating-gate MOSFETs. Operating in a negative feedback topology, the amplifier can deal with wide signal swings up to /spl plusmn/200 /spl mu/A, with 1% of the THD and 10 pF of C/sub L/. Designs and HSPICE simulation results are demonstrated on 0.5 /spl mu/m double poly CMOS processes with 1.5 V and 1 V power supplies to indicate high frequency and low power capabilities respectively.
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