{"title":"Surface states in m.i.s. devices of cadmium sulphide","authors":"M. Manshadi, J. Woods","doi":"10.1049/IJ-SSED:19780013","DOIUrl":null,"url":null,"abstract":"Measurements of the shunt conductance of m.i.s. diodes of cadmium sulphide, formed by depositing gold on to surfaces of crystals previously etched in hydrochloric acid, are interpreted to suggest that there is a density of surface states of the order of 2.0 X 1011 cm-2 eV-1 at the interface between the CdS and the semi-insulating layer. Comparison of the voltage intercept of the C-2/V plots with the photoelectric threshold suggests that the etching leaves a semi-insulating layer with a thickness of 400?600 A on the surface of the CdS.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Measurements of the shunt conductance of m.i.s. diodes of cadmium sulphide, formed by depositing gold on to surfaces of crystals previously etched in hydrochloric acid, are interpreted to suggest that there is a density of surface states of the order of 2.0 X 1011 cm-2 eV-1 at the interface between the CdS and the semi-insulating layer. Comparison of the voltage intercept of the C-2/V plots with the photoelectric threshold suggests that the etching leaves a semi-insulating layer with a thickness of 400?600 A on the surface of the CdS.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
