Performance analysis of Cu(In,Ga)(Se,S)2 thin film solar cells

T. Lavrenko, Kerstin Marzinzig, T. Walter
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Abstract

The impact of sulfur incorporation and its content in the Cu(In,Ga)(Se,S)2 layer with respect to a bandgap widening and an improvement of absorber quality has been investigated. A theoretical method to quantitatively estimate the minority carrier lifetimes based on experimental temperature dependent Voc measurements is presented. The often observed discrepancy between lifetime measurements on the bare Cu(In,Ga)(Se,S)2 films and completed devices is discussed.
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Cu(In,Ga)(Se,S)2薄膜太阳能电池性能分析
研究了Cu(in,Ga)(Se,S)2层中硫的掺入及其含量对增宽带隙和改善吸收剂质量的影响。提出了一种基于实验温度相关Voc测量值定量估计少数载流子寿命的理论方法。讨论了裸Cu(In,Ga)(Se,S)2薄膜和完整器件寿命测量之间经常观察到的差异。
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