Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7355764
Yuxiao Liu, R. Huang, C. Madsen
Design optimizations for the previously proposed lens-to-channel waveguide concentrator is discussed. Using integrated tapered waveguides, up to 900× geometric concentration can be achieved without separate secondary optics under ideal conditions. A 600× practical system is built in Zemax and simulated using a Fresnel lens array, showing less than 1% structural loss and angular response over 0.6 degrees.
{"title":"Design optimizations for a lens-to-channel waveguide solar concentrator","authors":"Yuxiao Liu, R. Huang, C. Madsen","doi":"10.1109/PVSC.2015.7355764","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355764","url":null,"abstract":"Design optimizations for the previously proposed lens-to-channel waveguide concentrator is discussed. Using integrated tapered waveguides, up to 900× geometric concentration can be achieved without separate secondary optics under ideal conditions. A 600× practical system is built in Zemax and simulated using a Fresnel lens array, showing less than 1% structural loss and angular response over 0.6 degrees.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116014374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7355755
P. Teng, Xinrui An, A. To, A. Barnett
A limited area p-n junction silicon solar cell is designed and the effect of limited area emitter on the output open circuit voltage (VOC) and efficiency is studied by a 3-D simulator Quokka. The recombination property of emitter, surface and bulk are all extracted from the test structures and this paper reports potential voltage that can be achieved on the limited area junction solar cells by the modelling. The result indicates that this approach will help improve VOC when the emitter area is reduced and the voltage will be more than 700mV. The result also shows that there is an optimum emitter width for the highest efficiency on the limited area junction solar cell.
{"title":"Modeling of silicon solar cells voltage increase on localized emitter area approach","authors":"P. Teng, Xinrui An, A. To, A. Barnett","doi":"10.1109/PVSC.2015.7355755","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355755","url":null,"abstract":"A limited area p-n junction silicon solar cell is designed and the effect of limited area emitter on the output open circuit voltage (VOC) and efficiency is studied by a 3-D simulator Quokka. The recombination property of emitter, surface and bulk are all extracted from the test structures and this paper reports potential voltage that can be achieved on the limited area junction solar cells by the modelling. The result indicates that this approach will help improve VOC when the emitter area is reduced and the voltage will be more than 700mV. The result also shows that there is an optimum emitter width for the highest efficiency on the limited area junction solar cell.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123463173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7355881
J. Colwell, A. Lennon
This paper reports on an investigation into the use of laser ablation inductively-coupled plasma mass spectrometry (LA-ICPMS) in analyzing copper diffusion through nickel barrier layers in selective-emitter silicon solar cells. Cells plated with nickel and copper were heat-treated at 200 °C for up to 15 hours. Following quenching in ethylene glycol, significant degradation was observed in the plated cells, whereas no degradation was observed in the slow cooled cells. Impurity analysis with high spatial resolution was obtained with LA-ICPMS, showing higher copper content in copper-plated cells after heat treatment compared to cells without copper plating or heat treatment. The limitations of LA-ICPMS for quantitative analysis and the importance of minimizing surface contamination to improve technique sensitivity are also highlighted.
{"title":"Analysis of copper penetration in selective-emitter silicon solar cells using laser ablation inductively-coupled plasma mass spectrometry","authors":"J. Colwell, A. Lennon","doi":"10.1109/PVSC.2015.7355881","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355881","url":null,"abstract":"This paper reports on an investigation into the use of laser ablation inductively-coupled plasma mass spectrometry (LA-ICPMS) in analyzing copper diffusion through nickel barrier layers in selective-emitter silicon solar cells. Cells plated with nickel and copper were heat-treated at 200 °C for up to 15 hours. Following quenching in ethylene glycol, significant degradation was observed in the plated cells, whereas no degradation was observed in the slow cooled cells. Impurity analysis with high spatial resolution was obtained with LA-ICPMS, showing higher copper content in copper-plated cells after heat treatment compared to cells without copper plating or heat treatment. The limitations of LA-ICPMS for quantitative analysis and the importance of minimizing surface contamination to improve technique sensitivity are also highlighted.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126975008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7355995
A. Virtuani, A. Skoczek, D. Strepparava
In this work we use and further elaborate a previously proposed approach which models the energy performance of an amorphous silicon (a-Si) PV module, including the well-known Staebler-Wronsky effect (typical for this technology). The extensions of the model to cover geographical locations representative of different climatic zones in North America (Mexico City, New Orleans, Seattle, and Fort St. John BC), using as solar and meteorological input parameters time series provided by GeoModel, shows that the model can be used to describe, the energy performance of a-Si and its very peculiar seasonal pattern. In addition it further reinforces the idea that this technology is more suited to warmer climates (SWE) and to latitudes (in the northern hemisphere) between 0 and 45°, due to the considerable spectral losses (on sunny days during which the most energy is produced) for this technology in winter time at high latitudes. Further, we show that for each site we are able to decouple spectral and SW effects, which are very specific to this technology, and act on similar time phases. SWE effects become more significant for warmer climates (Mexico City, New Orleans), whereas the impact of spectral losses are considerable at high latitudes (Seattle, Fort St John) in winter time.
在这项工作中，我们使用并进一步阐述了先前提出的方法，该方法模拟了非晶硅(a- si)光伏组件的能量性能，包括著名的Staebler-Wronsky效应(该技术的典型)。利用GeoModel提供的太阳和气象输入参数时间序列，将模型扩展到北美不同气候带具有代表性的地理位置(墨西哥城、新奥尔良、西雅图和Fort St. John BC)，表明该模型可以用来描述a-Si的能量表现及其非常特殊的季节模式。此外，它进一步强化了这种技术更适合于温暖气候(SWE)和纬度(北半球)在0到45°之间的想法，因为这种技术在高纬度地区的冬季会有相当大的光谱损失(在产生最多能量的晴天)。此外，我们表明，对于每个站点，我们能够解耦光谱和SW效应，这是非常特定于该技术的，并且作用于相似的时间相位。在较温暖的气候(墨西哥城、新奥尔良)，SWE效应更为显著，而在冬季，高纬度地区(西雅图、圣约翰堡)，光谱损失的影响相当大。
{"title":"Modeling the performance of amorphous silicon photovoltaic modules for different geographical locations in North-America","authors":"A. Virtuani, A. Skoczek, D. Strepparava","doi":"10.1109/PVSC.2015.7355995","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355995","url":null,"abstract":"In this work we use and further elaborate a previously proposed approach which models the energy performance of an amorphous silicon (a-Si) PV module, including the well-known Staebler-Wronsky effect (typical for this technology). The extensions of the model to cover geographical locations representative of different climatic zones in North America (Mexico City, New Orleans, Seattle, and Fort St. John BC), using as solar and meteorological input parameters time series provided by GeoModel, shows that the model can be used to describe, the energy performance of a-Si and its very peculiar seasonal pattern. In addition it further reinforces the idea that this technology is more suited to warmer climates (SWE) and to latitudes (in the northern hemisphere) between 0 and 45°, due to the considerable spectral losses (on sunny days during which the most energy is produced) for this technology in winter time at high latitudes. Further, we show that for each site we are able to decouple spectral and SW effects, which are very specific to this technology, and act on similar time phases. SWE effects become more significant for warmer climates (Mexico City, New Orleans), whereas the impact of spectral losses are considerable at high latitudes (Seattle, Fort St John) in winter time.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128426167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7356385
A. Vetter, Bernhard Hofbeck, P. Kubis, C. Brabec
Imaging methods are an essential tool for improving processing of solar cells. Unfortunately, it is difficult to validate the imaging methods in detail. One focus of our work was to establish an approach by which one can assess the accuracy of the determination of the influence of defects via imaging on CIGS solar cells. The method is, however, not restricted to CIGS and should be easily transferable to other solar cell types, in particular other thin film technologies. The benefit of such a method is the possibility to validate and optimize imaging techniques and, in turn, improving tools to optimize solar cell material and processing of solar cells.
{"title":"Assessing the accuracy of imaging techniques for defect characterization on thin film solar cells","authors":"A. Vetter, Bernhard Hofbeck, P. Kubis, C. Brabec","doi":"10.1109/PVSC.2015.7356385","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356385","url":null,"abstract":"Imaging methods are an essential tool for improving processing of solar cells. Unfortunately, it is difficult to validate the imaging methods in detail. One focus of our work was to establish an approach by which one can assess the accuracy of the determination of the influence of defects via imaging on CIGS solar cells. The method is, however, not restricted to CIGS and should be easily transferable to other solar cell types, in particular other thin film technologies. The benefit of such a method is the possibility to validate and optimize imaging techniques and, in turn, improving tools to optimize solar cell material and processing of solar cells.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121691469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/pvsc.2015.7356147
A. Upadhyaya, Y. Ok, E. Chang, V. Upadhyaya, Keeya Madani, K. Tate, Eunhwan Cho, B. Rounsaville, V. Chandrasekaran, V. Yelundur, Atul Gupta, A. Rohatgi
This paper shows the results and the limitations of a 21% N-Cz 239cm2 screen printed cell with blanket p+ and n+. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on the back side which can overcome those limitations. Since both the doped n+ layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced resulting in much higher Voc. Process optimization resulted in high iVoc of 728mV on the symmetric structures. The un-metallized cell structure with Al2O3/SiN passivated lightly doped p+ emitter and a tunnel oxide/n+ poly back also gave high iVoc of 727mV. The finished screen-printed 132cm2 device gave a Voc of 683mV, Jsc of 39.4mA/cm2, FF of 77.6% and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.
本文介绍了一种具有p+和n+覆盖层的21% n - cz 239cm2丝网印刷电池的结果和局限性。此外，我们还展示了在背面掺杂n+多晶硅和金属的隧道氧化物的性能和影响，可以克服这些限制。由于掺杂的n+层和金属触点都在硅晶片的外部，因此Jo急剧减少，从而导致更高的Voc。工艺优化后，对称结构的iVoc高达728mV。采用Al2O3/SiN钝化轻掺杂p+发射极和隧道氧化物/n+聚背的非金属化电池结构也获得了727mV的高iVoc。完成的132cm2丝网印刷器件的Voc为683mV, Jsc为39.4mA/cm2, FF为77.6%，效率为20.9%。电池分析表明，选择性发射极的实现可以提供更高的效率。
{"title":"Ion implanted screen printed N-type solar cell with tunnel oxide passivated back contact","authors":"A. Upadhyaya, Y. Ok, E. Chang, V. Upadhyaya, Keeya Madani, K. Tate, Eunhwan Cho, B. Rounsaville, V. Chandrasekaran, V. Yelundur, Atul Gupta, A. Rohatgi","doi":"10.1109/pvsc.2015.7356147","DOIUrl":"https://doi.org/10.1109/pvsc.2015.7356147","url":null,"abstract":"This paper shows the results and the limitations of a 21% N-Cz 239cm<sup>2</sup> screen printed cell with blanket p<sup>+</sup> and n<sup>+</sup>. In addition, we show the properties and impact of tunnel oxide capped with doped n<sup>+</sup> polysilicon and metal on the back side which can overcome those limitations. Since both the doped n<sup>+</sup> layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced resulting in much higher V<sub>oc</sub>. Process optimization resulted in high iV<sub>oc</sub> of 728mV on the symmetric structures. The un-metallized cell structure with Al<sub>2</sub>O<sub>3</sub>/SiN passivated lightly doped p<sup>+</sup> emitter and a tunnel oxide/n<sup>+</sup> poly back also gave high iV<sub>oc</sub> of 727mV. The finished screen-printed 132cm<sup>2</sup> device gave a V<sub>oc</sub> of 683mV, J<sub>sc</sub> of 39.4mA/cm<sup>2</sup>, FF of 77.6% and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114812310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7356023
K. Zaunbrecher, P. Dippo, D. Kuciauskas, T. Gessert, T. Barnes, M. Edirisooriya, P. A. R. D. Jayathilaka, O. S. Ogedengbe, T. Myers
Low-temperature photoluminescence (LTPL) and time-resolved photoluminescence (TRPL) were used to study bulk material and interface properties of MBE-grown CdTe. CdTe and CdTe ternary-alloy double heterostructures (DH) grown on CdTe and InSb substrates show LTPL emission from excitons, dislocations, and other defects. Photoluminescence spectra changed with material composition and quality, with near-band exciton emissions increasing and emissions related to extended and point defects decreasing as defect density decreased and interfaces improved. Measured lifetimes from TRPL decay curves also reflected the quality of the DHs. Data showed that overall DH quality depends more upon buffer thicknesses than absorber layer thicknesses. CdTe/CdMgTe DHs grown on InSb substrates had the highest near-band PL and lowest defect emission as seen in low-temperature spectral emission and highest lifetimes in TRPL data.
{"title":"Photoluminescence of Crystalline cDtE double heterostructures grown by MBE","authors":"K. Zaunbrecher, P. Dippo, D. Kuciauskas, T. Gessert, T. Barnes, M. Edirisooriya, P. A. R. D. Jayathilaka, O. S. Ogedengbe, T. Myers","doi":"10.1109/PVSC.2015.7356023","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356023","url":null,"abstract":"Low-temperature photoluminescence (LTPL) and time-resolved photoluminescence (TRPL) were used to study bulk material and interface properties of MBE-grown CdTe. CdTe and CdTe ternary-alloy double heterostructures (DH) grown on CdTe and InSb substrates show LTPL emission from excitons, dislocations, and other defects. Photoluminescence spectra changed with material composition and quality, with near-band exciton emissions increasing and emissions related to extended and point defects decreasing as defect density decreased and interfaces improved. Measured lifetimes from TRPL decay curves also reflected the quality of the DHs. Data showed that overall DH quality depends more upon buffer thicknesses than absorber layer thicknesses. CdTe/CdMgTe DHs grown on InSb substrates had the highest near-band PL and lowest defect emission as seen in low-temperature spectral emission and highest lifetimes in TRPL data.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131810319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7355984
R. Bravo, V. Tran, James Hernandez
This paper will present the design of SCE's Smart Grid Test Facility (SGTF) and equipment test. This facility can be used to test, demonstrate, and validate utility distribution equipment performance before, during, and/or after their installation in the grid. This test facility's voltage, frequency, real power, and reactive power will be completely controlled where the equipment's automation, protection, and communications performance can be fully evaluated. This paper will provide the following additional information. First, it will provide a layout of the two distribution circuits in this facility with the equipment that will be installed to support the testing. Additionally, this paper will provide an overview of various tests that will be performed at SGTF to assess equipment performance. Furthermore, it will provide the ability to test automation and protection schemes that are otherwise prohibited to perform in the field. Finally, it will provide recommendations on additional uses of this facility such as training, installation procedures, volt/VAR control schemes, and communications. This facility will provide us the ability to pre-test pilot or new equipment without adversely affecting or disturbing customers.
{"title":"Advanced smart grid distribution testing","authors":"R. Bravo, V. Tran, James Hernandez","doi":"10.1109/PVSC.2015.7355984","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355984","url":null,"abstract":"This paper will present the design of SCE's Smart Grid Test Facility (SGTF) and equipment test. This facility can be used to test, demonstrate, and validate utility distribution equipment performance before, during, and/or after their installation in the grid. This test facility's voltage, frequency, real power, and reactive power will be completely controlled where the equipment's automation, protection, and communications performance can be fully evaluated. This paper will provide the following additional information. First, it will provide a layout of the two distribution circuits in this facility with the equipment that will be installed to support the testing. Additionally, this paper will provide an overview of various tests that will be performed at SGTF to assess equipment performance. Furthermore, it will provide the ability to test automation and protection schemes that are otherwise prohibited to perform in the field. Finally, it will provide recommendations on additional uses of this facility such as training, installation procedures, volt/VAR control schemes, and communications. This facility will provide us the ability to pre-test pilot or new equipment without adversely affecting or disturbing customers.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124860277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7355914
R. Takabe, K. Toko, K. Hara, N. Usami, T. Suemasu
We grow BaSi2 films on Ge(111) substrates using various templates. First, we form 30 nm BaGe2 templates by deposition of Ba on hot Ge, followed by molecular beam epitaxy (MBE) at 580 °e to form BaSi2. We succeed to grow a-axis-oriented BaSi2; however BaSi2 is not a continuous film, and hence BaSi2 is easily oxidized after exposed to air. Next, we grow 3 nm BaSi2 template by solid phase epitaxy (SPE) with initial crystal nuclei BaSi2 at 580 °C, followed by MBE at 580°C. As a result, we achieved highly [100]-oriented BaSi2 continuous films.
{"title":"Fabrication and characterization of BaSi2 films on Ge(111) substrates by molecular beam epitaxy","authors":"R. Takabe, K. Toko, K. Hara, N. Usami, T. Suemasu","doi":"10.1109/PVSC.2015.7355914","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355914","url":null,"abstract":"We grow BaSi<sub>2</sub> films on Ge(111) substrates using various templates. First, we form 30 nm BaGe<sub>2</sub> templates by deposition of Ba on hot Ge, followed by molecular beam epitaxy (MBE) at 580 °e to form BaSi<sub>2</sub>. We succeed to grow a-axis-oriented BaSi<sub>2</sub>; however BaSi<sub>2</sub> is not a continuous film, and hence BaSi<sub>2</sub> is easily oxidized after exposed to air. Next, we grow 3 nm BaSi<sub>2</sub> template by solid phase epitaxy (SPE) with initial crystal nuclei BaSi<sub>2</sub> at 580 °C, followed by MBE at 580°C. As a result, we achieved highly [100]-oriented BaSi<sub>2</sub> continuous films.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128915425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/PVSC.2015.7355817
Yunlin Sun, Siming Chen, Shuquan Chen, Hui Shen
Base on finite-element-method(FEM), temperature of PV roof was simulated and analyzed with various radiation and air velocity. The results showed that roof with PV modules got lower temperature of 1~5°C with a 20% difference compared to roof without modules. Beside generating power, PV modules can insulate building roof from heat with important value in engineer application.
{"title":"Study on attached PV roof's temperature with FEM simulation","authors":"Yunlin Sun, Siming Chen, Shuquan Chen, Hui Shen","doi":"10.1109/PVSC.2015.7355817","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355817","url":null,"abstract":"Base on finite-element-method(FEM), temperature of PV roof was simulated and analyzed with various radiation and air velocity. The results showed that roof with PV modules got lower temperature of 1~5°C with a 20% difference compared to roof without modules. Beside generating power, PV modules can insulate building roof from heat with important value in engineer application.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116292406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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