Formation and suppression of a newly discovered secondary EOS event in HBM test systems

T. Meuse, L. Ting, J. Schichl, R. Barrett, D. Bennett, R. Cline, C. Duvvury, M. Hopkins, H. Kunz, J. Leiserson, R. Steinhoff
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引用次数: 15

Abstract

A previously undetected trailing pulse from HBM testers was found to create unexpected gate oxide failures on new technologies. This secondary pulse, which is EOS in nature, is caused by the discharge relay and the parasitics of the charge circuit. This paper investigates this critical phenomenon and establishes the tester improvements to safely suppress the trailing pulse effects.
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在HBM测试系统中新发现的二次EOS事件的形成和抑制
在新技术中,HBM测试器先前未检测到的尾随脉冲导致了意想不到的栅氧化故障。这种二次脉冲本质上是EOS,是由放电继电器和充电电路的寄生引起的。本文对这一临界现象进行了研究,并提出了安全抑制尾随脉冲效应的测试仪改进方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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