On-state Leakage Current Modeling in AlGaN/GaN HEMT

Shradha Gupta, J. Kaushik, Ankur Gupta
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Abstract

In this paper, we modeled the on-state leakage current using a Two-Dimensional Analytical model. The temperature dependence of on-state gate leakage current has been explained as a combination of trap assisted tunneling current and phonon-assisted tunneling current. In addition, this model includes the effect of phonon energy on leakage current. Generally, the electron-phonon interaction changes with the temperature can lead to altering the effective phonon energy. This electron-phonon coupling is attributed to the considerable decrease in leakage current as temperature increases. Moreover, the sudden increase in leakage current at specific drain bias has been described by the rise in number of phonons.
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AlGaN/GaN HEMT的稳态泄漏电流建模
本文采用二维解析模型对导通泄漏电流进行建模。将导通栅极漏电流的温度依赖性解释为阱辅助隧穿电流和声子辅助隧穿电流的结合。此外,该模型还考虑了声子能量对漏电流的影响。一般来说,电子-声子相互作用随温度的变化会导致有效声子能量的改变。这种电子-声子耦合归因于泄漏电流随着温度的升高而显著降低。此外,在特定漏极偏压下,泄漏电流的突然增加已被描述为声子数量的增加。
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