Titanium oxide produced by plasma technology for MOS structures

Abstract

The authors study TiO/sub 2/ layers produced by Reactive Pulse Plasma (RPP) deposition on semiconductor substrates. The layers have been investigated both in terms of structure and electrophysical properties. The thickness and refractive index, the structure and the chemical composition were examined by ellipsometry, SEM and SIMS, respectively. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MOS structures were determined. The layers obtained show satisfactory mechanical and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectric gate.