T. Matsuno, K. Nishii, S. Sonetaka, Y. Toyoda, N. Iwamoto
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引用次数: 3
Abstract
The collector profile dependences of RF power characteristics of SiGe HBT have been studied. A selectively ion implanted collector (SIC) structure with a thick and lightly doped collector layer showed good RF power characteristics including the adjacent-channel-power-ratio characteristics for middle class power around output power of 16 dBm while maintaining BV/sub CEO/ over 5 V. The maximum BVCEO of 9 V was obtained using the same process only by removing the SIC structure. Both structures are available to fabrication of multi-stage RF power amplifier on to one chip by single process.
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