{"title":"Operation of RF Power MOSFETs under Proton Radiation","authors":"N. Jiang, Z. Ma, L.B. Li","doi":"10.1109/EMICC.2006.282746","DOIUrl":null,"url":null,"abstract":"The effects of proton radiation on the RF power performance of multi-finger RF MOSFETs are, for the first time, reported in this work. Besides DC and small-signal AC characterizations, on-wafer large-signal high-power performance characteristics were also measured for multi-finger RF n-MOSFETs. The comparison between pre- and post-radiation shows that the power performance of RF MOSFETs exhibits excellent tolerance to high-fluence proton irradiation, revealing the potential of RF MOSFETs in the applications of power amplifiers for wireless application under severe radiation environment even without any intentional radiation hardening","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The effects of proton radiation on the RF power performance of multi-finger RF MOSFETs are, for the first time, reported in this work. Besides DC and small-signal AC characterizations, on-wafer large-signal high-power performance characteristics were also measured for multi-finger RF n-MOSFETs. The comparison between pre- and post-radiation shows that the power performance of RF MOSFETs exhibits excellent tolerance to high-fluence proton irradiation, revealing the potential of RF MOSFETs in the applications of power amplifiers for wireless application under severe radiation environment even without any intentional radiation hardening
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