{"title":"On-chip protection for automotive integrated circuits robustness","authors":"J. Salcedo, D. Clarke, J. Hajjar","doi":"10.1109/ICCDCS.2012.6188920","DOIUrl":null,"url":null,"abstract":"On-chip protection architecture for automotive ICs (integrated circuits) system-level robustness is introduced. It comprises three-level protection for interface pins with high bidirectional voltage swing. A first protection stage is optimized to sustain the largest portion of the ESD (electrostatic discharge) and EMI (electromagnetic interference)-induced stress. A second-level protection stage is customized to sustain the relatively lower IC-level ESD stress, and the third level protection stage absorbs the initial transient voltage impulse.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"PP 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
On-chip protection architecture for automotive ICs (integrated circuits) system-level robustness is introduced. It comprises three-level protection for interface pins with high bidirectional voltage swing. A first protection stage is optimized to sustain the largest portion of the ESD (electrostatic discharge) and EMI (electromagnetic interference)-induced stress. A second-level protection stage is customized to sustain the relatively lower IC-level ESD stress, and the third level protection stage absorbs the initial transient voltage impulse.