{"title":"Subthreshold slope reduction of tunneling transistors through deformation potential engineering","authors":"S. Agarwal, G. Mazzeo, E. Yablonovitch","doi":"10.1109/INOW.2008.4634560","DOIUrl":null,"url":null,"abstract":"The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.
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