Methodology to compare on-state breakdown loci of GaAs FET's

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. Pub Date : 2004-12-06 DOI:10.1109/ICM.2004.1434261

N. Ismail, N. Malbert, N. Labat, A. Touboul, J. Muraro

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引用次数: 2

Abstract

On-state breakdown loci of three technologies (power PHEMT, PHEMT and MESFET) have been measured using gate-current extraction techniques. We present a precise understanding of the correlation between the on-state breakdown voltage (BV on-state) locus and the reverse Igs-Vgs characteristics. From the comparison of Igs-Vgs characteristics, this study has allowed establishing a methodology to compare BV-on state of the devices under test. We have found that for technologies with impact ionization occurring at pinch off, such as the PHEMT technology with a high leakage gate current, the on-state breakdown locus presents a pronounced "exponential" shape. On the contrary, a technology with high impact ionization component in the gate current, such as the PPHEMT technology, presents a shape of the on-state breakdown locus rather "hyperbolic". We assess that technologies with impact ionization occurring at pinch off such as the PHEMT and PPHEMT present a more "hyperbolic" shape of the on-state breakdown locus than technologies with impact ionization occurring in open channel regime such as the MESFET.

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比较GaAs场效应晶体管的导通击穿位点的方法

利用栅极电流提取技术测量了三种技术(功率PHEMT、PHEMT和MESFET)的导通击穿位点。我们提出了导通击穿电压(BV导通状态)轨迹与反向Igs-Vgs特性之间的关系的精确理解。通过Igs-Vgs特性的比较，本研究建立了一种比较被测器件BV-on状态的方法。我们发现，对于在掐断发生冲击电离的技术，例如具有高漏极电流的PHEMT技术，导通击穿轨迹呈现明显的“指数”形状。相反，在栅极电流中具有高冲击电离分量的技术，如PPHEMT技术，其导通击穿轨迹呈“双曲线”形状。我们评估了在掐断发生冲击电离的技术，如PHEMT和PHEMT，比在开放通道发生冲击电离的技术，如MESFET，呈现出更“双曲线”形状的on-state击穿轨迹。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.

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