The characteristics of electromigration and thermomigration in flip chip solder joints

Dan-Liang Yang, Y. Chan
{"title":"The characteristics of electromigration and thermomigration in flip chip solder joints","authors":"Dan-Liang Yang, Y. Chan","doi":"10.1109/THERMINIC.2007.4451744","DOIUrl":null,"url":null,"abstract":"Electromigration and thermomigration behaviors of eutectic tin-lead solder joints were studied above 100 degC with the currents ranging from 1.6 A to 2.0 A. The local temperature of the chip was deducted according to temperature coefficient of resistance. Also, this temperature was inspected by a thermal infrared mapping technique. It is suggested that the heat accumulation within first-level solder interconnections was highly related to the current density. During the electromigration process, Pb migration was apparently visible because of its faster diffusivity. Meanwhile, voids were initiated at the entry location of the electron flow due to the current crowding effect. Numerical simulation also predicted a local current density of above 105 A/cm2 within the solder joint In the thermomigration process, the transport of Pb was detected owing to the thermal gradient across the solder joint. Voids also occurred at the contact window due to accelerated atomic diffusion. In addition, the effect of electromigration and thermomigration on the mechanical behavior of the solder joint was examined through shearing tests.","PeriodicalId":264943,"journal":{"name":"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THERMINIC.2007.4451744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Electromigration and thermomigration behaviors of eutectic tin-lead solder joints were studied above 100 degC with the currents ranging from 1.6 A to 2.0 A. The local temperature of the chip was deducted according to temperature coefficient of resistance. Also, this temperature was inspected by a thermal infrared mapping technique. It is suggested that the heat accumulation within first-level solder interconnections was highly related to the current density. During the electromigration process, Pb migration was apparently visible because of its faster diffusivity. Meanwhile, voids were initiated at the entry location of the electron flow due to the current crowding effect. Numerical simulation also predicted a local current density of above 105 A/cm2 within the solder joint In the thermomigration process, the transport of Pb was detected owing to the thermal gradient across the solder joint. Voids also occurred at the contact window due to accelerated atomic diffusion. In addition, the effect of electromigration and thermomigration on the mechanical behavior of the solder joint was examined through shearing tests.
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倒装焊点的电迁移和热迁移特性
研究了锡铅共晶焊点在100℃以上、1.6 ~ 2.0 A电流条件下的电迁移和热迁移行为。根据电阻温度系数减去芯片的局部温度。此外,还通过热红外测绘技术检测了该温度。结果表明,一级焊点内部的热积累与电流密度密切相关。在电迁移过程中,由于Pb具有较快的扩散速率,其迁移明显。同时,由于电流拥挤效应,在电子流的入口位置产生了空洞。数值模拟还预测了焊点内的局部电流密度在105 a /cm2以上。在热迁移过程中,由于焊点上的热梯度,检测到Pb的迁移。由于原子扩散加速,在接触窗口处也出现了空洞。此外,通过剪切试验考察了电迁移和热迁移对焊点力学性能的影响。
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