{"title":"Low cost X-band power amplifier MMIC fabricated on a 0.25 /spl mu/m GaAs pHEMT process","authors":"W. Bosch, J. Mayock, M. O'Keefe, J. McMonagle","doi":"10.1109/RADAR.2005.1435787","DOIUrl":null,"url":null,"abstract":"A family of X-Band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150 mm (6\") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit 5 W to 10 W RF output power under pulsed conditions; 16 dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30 GHz.","PeriodicalId":444253,"journal":{"name":"IEEE International Radar Conference, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Radar Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADAR.2005.1435787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
A family of X-Band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150 mm (6") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit 5 W to 10 W RF output power under pulsed conditions; 16 dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30 GHz.
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