{"title":"Reliability Evaluation with Heat Dissipation Effect for a Ka-band MMIC PA","authors":"Q. Lin, Haifeng Wu, Yingde Pan, Linsheng Liu","doi":"10.1145/3291842.3291874","DOIUrl":null,"url":null,"abstract":"The circuit design and reliability evaluation for a Ka-band MMIC power amplifier (PA) based on 0.1 um GaAs pHEMT process is presented in this paper. A modified finite element analysis (FEA) method is used to explore the interconnect reliability and thermal reliability for this PA. The heat dissipation of interconnect and transistor has been considered simultaneously in this model based on the atomic flux divergence (AFD) theory. The reliability evaluation is presented accurately with the temperature distribution and AFD distribution. Thus, the weakest spot of the model can be identified. This kind of reliability evaluation method can be applied easily for other conventional ICs and provide valuable guidance for PA reliability design.","PeriodicalId":283197,"journal":{"name":"Proceedings of the 2nd International Conference on Telecommunications and Communication Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Conference on Telecommunications and Communication Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3291842.3291874","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The circuit design and reliability evaluation for a Ka-band MMIC power amplifier (PA) based on 0.1 um GaAs pHEMT process is presented in this paper. A modified finite element analysis (FEA) method is used to explore the interconnect reliability and thermal reliability for this PA. The heat dissipation of interconnect and transistor has been considered simultaneously in this model based on the atomic flux divergence (AFD) theory. The reliability evaluation is presented accurately with the temperature distribution and AFD distribution. Thus, the weakest spot of the model can be identified. This kind of reliability evaluation method can be applied easily for other conventional ICs and provide valuable guidance for PA reliability design.
介绍了一种基于0.1 um GaAs pHEMT工艺的ka波段MMIC功率放大器的电路设计和可靠性评估。采用改进的有限元分析方法对该结构的互连可靠性和热可靠性进行了分析。该模型基于原子通量散度理论，同时考虑了互连体和晶体管的散热。采用温度分布和AFD分布对可靠性进行了准确的评价。这样，就可以识别出模型的最薄弱环节。这种可靠性评估方法可以很容易地应用于其他传统集成电路的可靠性评估，为放大器的可靠性设计提供了有价值的指导。
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