Power Device Loss Analysis of a High-Voltage High-Power Dual Active Bridge DC-DC Converter

Abstract

The insulated-gate bipolar transistor (IGBT) offers low conduction loss and improved performance and, hence, is a potential candidate for high-current and high-voltage power electronic applications. This chapter presents the power loss estimation of IGBTs as employed in a high-voltage high-power dual active bridge (DAB) DC-DC converter. The mathematical models of the device currents are derived, and the power loss prediction is clearly explained using the mathematical models. There are many parameters to consider when selecting an appropriate power device for a given application. This chapter highlights the step-by-step procedure for selecting suitable IGBTs for a 20 kW, 540/125 V, 20 kHz DAB converter designed for aerospace energy storage systems. Experimental results are given to demonstrate the device performance at 540 V, 80 A operation of high-voltage IGBTs and 125 V, 300 A operation of low-voltage IGBTs and thus validate the selection procedure presented.