Transparent BIST for ECC-based memory repair

M. Nicolaidis, P. Papavramidou
{"title":"Transparent BIST for ECC-based memory repair","authors":"M. Nicolaidis, P. Papavramidou","doi":"10.1109/IOLTS.2013.6604082","DOIUrl":null,"url":null,"abstract":"Embedded memories occupy the largest part of modern SoCs and include an even larger amount of transistors. As memories are designed very tightly to the technology limits, they are more prone to failures than other circuits. Thus, they concentrate the large majority of fabrication defects affecting yield adversely. Defect densities are expected to sharply increase in ultimate CMOS and post CMOS processes, resulting in high defect densities. These problems will further worsen due to stringent low-power constraints requiring drastic reduction of voltage levels. To cope with the resulting high defect densities in cost effective manner, ECC-based repair combining ECC with spare words becomes mandatory. On the other hand, coping with accelerating aging may require testing the memories during application execution, making mandatory transparent BIST Nevertheless, traditional implementations of transparent BIST do not comply with the constraints of ECC-based repair. To cope with this issue the paper proposes a transparent BIST architecture compliant with ECC-based repair.","PeriodicalId":423175,"journal":{"name":"2013 IEEE 19th International On-Line Testing Symposium (IOLTS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 19th International On-Line Testing Symposium (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2013.6604082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

Embedded memories occupy the largest part of modern SoCs and include an even larger amount of transistors. As memories are designed very tightly to the technology limits, they are more prone to failures than other circuits. Thus, they concentrate the large majority of fabrication defects affecting yield adversely. Defect densities are expected to sharply increase in ultimate CMOS and post CMOS processes, resulting in high defect densities. These problems will further worsen due to stringent low-power constraints requiring drastic reduction of voltage levels. To cope with the resulting high defect densities in cost effective manner, ECC-based repair combining ECC with spare words becomes mandatory. On the other hand, coping with accelerating aging may require testing the memories during application execution, making mandatory transparent BIST Nevertheless, traditional implementations of transparent BIST do not comply with the constraints of ECC-based repair. To cope with this issue the paper proposes a transparent BIST architecture compliant with ECC-based repair.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于ecc的内存修复透明BIST
嵌入式存储器占据了现代soc的最大部分,并且包含更多的晶体管。由于存储器的设计非常严格地限制了技术,因此它们比其他电路更容易出现故障。因此,它们集中了影响良率的绝大多数制造缺陷。在最终CMOS和后CMOS工艺中,缺陷密度预计会急剧增加,从而导致高缺陷密度。由于严格的低功率限制要求大幅降低电压水平,这些问题将进一步恶化。为了以经济有效的方式应对由此导致的高缺陷密度,基于ECC的修复将ECC与备用字相结合成为必要。另一方面,为了应对加速老化,可能需要在应用程序执行过程中对内存进行测试,从而强制实现透明的BIST。然而,传统的透明BIST实现并不符合基于ecc的修复约束。为了解决这一问题,本文提出了一种透明的、符合基于ecc的修复的BIST体系结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A low-cost input vector monitoring concurrent BIST scheme NBTI aging tolerance in pipeline based designs NBTI Measuring the performance impact of permanent faults in modern microprocessor architectures Power supply glitch induced faults on FPGA: An in-depth analysis of the injection mechanism Approximate computing: Energy-efficient computing with good-enough results
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1