Characterization of Ray-PN Resist for Soft-X-Ray Projection Lithography

Abstract

To be useful for integrated circuit (IC) manufacturing, a resist process must be capable of high throughput and exhibit good pattern transfer capability, as well as demonstrate high resolution. In 1990, imaging of 50 nm-wide lines and spaces in polymethyl methacrylate (PMMA) resist, using a 20× Schwarzschild optic at λ = 14 nm, was reported.1,2 PMMA has long been known for its extremely high resolution and good process latitude, but its low sensitivity and poor plasma etch resistance make it an unlikely candidate for an IC fabrication process.