C. Oh, K. Yeo, Min Sang Kim, Chang-Sub Lee, D. Choi, Sung Hwan Kim, S. Lee, Sung-min Kim, Jung-dong Choe, Yong Kyu Lee, E. Yoon, Ming Li, S. Suk, Dong-Won Kim, Donggun Park, Kinam Kim
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引用次数: 6
Abstract
In this article, we evaluated the structural merits of a partially insulated MOSFET (PiFET), for ultimate scaling of planar MOSFETs, through simulation and fabrication. The newly fabricated PiFET showed outstanding short channel effect (SCE) immunity and off-current characteristics over the conventional MOSFET, resulting from a self-induced halo region, self-limiting S/D shallow junction, and reduced junction area due to PiOX layer formation. Thus, the PiFET can be an attractive alternative for ultimate scaling of planar MOSFETs.
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