{"title":"L-band dielectric resonator filters and oscillators with low vibration sensitivity and ultra low noise","authors":"S. Sparagna","doi":"10.1109/FREQ.1989.68842","DOIUrl":null,"url":null,"abstract":"The evolution of the dielectric resonator filter (DRF) design is discussed and the incorporation of this design into a low-noise dielectric resonator oscillator (DRO) is described. The results of each intermediate step are included along with the final results. The unique properties of the DRF allow it to have a loaded Q of >6500 at 1.538 GHz with an insertion loss of approximately 6 dB while maintaining a vibration sensitivity 2.2*10/sup -8/ (G/sup -1/). The use of high-pressure bonding and the elimination of the metallization at the cavity and substrate interface allows this configuration to work.<<ETX>>","PeriodicalId":294361,"journal":{"name":"Proceedings of the 43rd Annual Symposium on Frequency Control","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 43rd Annual Symposium on Frequency Control","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.1989.68842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The evolution of the dielectric resonator filter (DRF) design is discussed and the incorporation of this design into a low-noise dielectric resonator oscillator (DRO) is described. The results of each intermediate step are included along with the final results. The unique properties of the DRF allow it to have a loaded Q of >6500 at 1.538 GHz with an insertion loss of approximately 6 dB while maintaining a vibration sensitivity 2.2*10/sup -8/ (G/sup -1/). The use of high-pressure bonding and the elimination of the metallization at the cavity and substrate interface allows this configuration to work.<>
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