{"title":"A low-power relaxation oscillator with improved thermal stability","authors":"L. Peng, Yuan Cao, Xiaofang Pan, Xiaojin Zhao","doi":"10.1109/ISOCC.2017.8368796","DOIUrl":null,"url":null,"abstract":"In this paper, we present a novel on-chip relaxation oscillator (RO) with high temperature stability. By employing delay compensation circuit (DCC) in the delay loop, the transmission delay, which is highly sensitive to the temperature variation, is well-suppressed, leading to significantly elevated temperature stability of the RO's period. In addition, the proposed RO implementation features a low power consumption of 0.11μW at 25° C, using 65nm 1.2V standard CMOS process. Moreover, according to our extensive simulation results, the variation of our proposed RO's output frequency is reduced to ±0.18% with the working temperature ranged from −55° C to 125° C, outperforming the other state of art RO designs.","PeriodicalId":248826,"journal":{"name":"2017 International SoC Design Conference (ISOCC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2017.8368796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, we present a novel on-chip relaxation oscillator (RO) with high temperature stability. By employing delay compensation circuit (DCC) in the delay loop, the transmission delay, which is highly sensitive to the temperature variation, is well-suppressed, leading to significantly elevated temperature stability of the RO's period. In addition, the proposed RO implementation features a low power consumption of 0.11μW at 25° C, using 65nm 1.2V standard CMOS process. Moreover, according to our extensive simulation results, the variation of our proposed RO's output frequency is reduced to ±0.18% with the working temperature ranged from −55° C to 125° C, outperforming the other state of art RO designs.