New type of sensor of radiation in a wide range of energy

Abstract

The Me-Amorphous chalcogenide semiconductor (AChS)--dielectric- semiconductor (Me - As2Se3: Sn - SiO2 - Si) (MChDS) structure was obtained. There have been found that under the lighting in electric field the MChDS in dependence from applied external direction of electric field positive or negative are charged. There were found that quantity of accumulated charge from light intensity have been depended linear type Q equals Qmax ((alpha) + (beta) D), where D--is the dose of radiation (D equals I t, where I is the intensity and t duration of radiation). There were studied and developed three different type of signal recording: by measuring of the photoempf, displacement photocurrent and accumulated charge, which allow to propose two type of sensors of radiation. The dose measuring and the image writing and readout processes in the real time and accumulation of the small signals regimes. The space functional separation of the recording and readout allows to carry out understroing repetition readout of the image and other operations.