Effect of Self-Heating on Linearity of Novel Junctionless Accumulation Mode Negative Capacitance FinFET

Abstract

This paper reports the investigation and comparison of linearity distortion in the novel Junctionless Accumulation Mode (JAM) Negative Capacitance (NC) FinFET, NC-FinFET, and conventional bulk FinFET with and without self-heating (SH). The study of bias point selection is described to ensure better RF performance and linearity. RF figures of merit (FOMs) such as transconductance and its higher-order derivatives gm2, gm3 along with VIP2, VIP3, and IIP3 have been shown to assess the linearity performance for all the three devices. Sentaurus TCAD is used to evaluate these FOMs. The novel JAM-NC-FinFET depicts robustness against linearity distortion due to SH, making it a suitable contender for low power RFIC applications.