A new charge pumping model for polysilicon thin film transistors

Abstract

A charge pumping model considering bulk states in polysilicon thin film transistors has been developed. Here, we define the threshold voltage as a minimum voltage to fill the untrapped states within an applied pulse width. And the threshold voltage including the emission energy level was obtained as a function of depth. It shows that the calculated current of this model is more consistent with the measured one rather than the current or interface state model.