{"title":"The effect of sputtering bias on the properties of Nb-Si-N film","authors":"Jianfeng Wang, Z. Song, K. Xu","doi":"10.1109/IVESC.2004.1414234","DOIUrl":null,"url":null,"abstract":"Nb-Si-N films were sputtered by RF reactive magnetron sputtering with different bias voltages. The effect of sputtering bias on the properties of Nb-Si-N film was studied. Energy dispersive X-ray spectroscopy, atomic force microscope, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, four-point probe method and microhardness tester were employed to characterize the microstructure and properties of the Nb-Si-N films. The results reveal that as the bias voltage increases the Nb/Si ratio and the surface roughness increase. The microstructure of Nb-Si-N films is the nano-composite structure with nano-sized NbN crystallites embedded in amorphous SiN/sub x/ phase. High sputtering bias is in favor of the growth of NbN grains in the Nb-Si-N film. As the bias increases the /spl epsiv/-NbN phase increases. The sheet resistance and microhardness of Nb-Si-N film also change as the bias varies. These phenomenons may be related with the /spl epsiv/-NbN phase in some degree.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2004.1414234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Nb-Si-N films were sputtered by RF reactive magnetron sputtering with different bias voltages. The effect of sputtering bias on the properties of Nb-Si-N film was studied. Energy dispersive X-ray spectroscopy, atomic force microscope, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, four-point probe method and microhardness tester were employed to characterize the microstructure and properties of the Nb-Si-N films. The results reveal that as the bias voltage increases the Nb/Si ratio and the surface roughness increase. The microstructure of Nb-Si-N films is the nano-composite structure with nano-sized NbN crystallites embedded in amorphous SiN/sub x/ phase. High sputtering bias is in favor of the growth of NbN grains in the Nb-Si-N film. As the bias increases the /spl epsiv/-NbN phase increases. The sheet resistance and microhardness of Nb-Si-N film also change as the bias varies. These phenomenons may be related with the /spl epsiv/-NbN phase in some degree.
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