K. Nary, S. Beccue, R. Nubling, R. Pierson, Keh-Chung Wang, P. Zampardi, A. Jayaraman
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引用次数: 3
Abstract
We have successfully demonstrated one-bit, second-order delta-sigma modulators in a 50 GHz (F/sub t/) AlGaAs/GaAs heterojunction bipolar transistor process. The integrated modulator, consisting of a low-pass single bit modulator, clock generators and output buffers, has attained an SNR of 37 dB at a sample rate of 2 Gs/s for an oversampling ratio of 20. The circuit dissipates 1.92 W. To our knowledge, these are the first reported HBT delta sigma modulators.
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