Design of CMOS class-E power amplifier for WLAN and bluetooth applications

2012 International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2012-03-15 DOI:10.1109/ICDCSYST.2012.6188679

P. Manikandan, R. Mathew

引用次数: 10

Abstract

A class-E power amplifier with modified driver for WLAN and Bluetooth applications is presented in this paper. It is shown that a parallel class-E power amplifier gives better output power at minimum input power levels compared to a conventional class-E power amplifier. A new modified driver stage is proposed which drives the power amplifier efficiently. Negative capacitance concept is implemented to reduce parasitic capacitances at the driver output node to shape the driver output voltage. The negative capacitance is implemented without external circuit and the driver circuit is fed with less than 5dBm input power at 2.4GHz operating frequency. The power amplifier gain is more than 20dBm with 40% PAE at 2.4GHz. The power amplifier and the modified driver circuitry were implemented in 0.18-μm UMC CMOS technology using Cadence tool.

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用于WLAN和蓝牙应用的CMOS e类功率放大器的设计

提出了一种改进驱动的e类功率放大器，用于无线局域网和蓝牙应用。结果表明，与传统的e类功率放大器相比，并联e类功率放大器在最小输入功率水平下具有更好的输出功率。提出了一种改进的驱动级，可以有效地驱动功率放大器。负电容概念的实施是为了减少在驱动器输出节点的寄生电容，以塑造驱动器输出电压。负电容不需要外接电路，驱动电路输入功率小于5dBm，工作频率为2.4GHz。2.4GHz时功率放大器增益大于20dBm, PAE为40%。利用Cadence工具在0.18 μm UMC CMOS工艺上实现了功率放大器和改进后的驱动电路。

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2012 International Conference on Devices, Circuits and Systems (ICDCS)

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