A numerical study of the effect of thermal radiation on the forced air cooling of low heat flux electronic chips mounted on one side of a vertical channel

R. Dhingra, P. Ghoshdastidar
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引用次数: 3

Abstract

A numerical study of steady, laminar, two-dimensional combined convection and radiation air cooling of four identical rectangular electronic chips (made of silicon) mounted on the left side of a vertical channel is presented in this paper. The conduction in the walls (composed of copper-epoxy) as well as in the chips in which energy is generated due to joule heating is also taken into account. The outside walls are treated as insulated. At the channel inlet the velocity is uniform. The stream function-vorticity-temperature approach with the finite-difference-based methodology has been applied to obtain flow and thermal fields in the fluid, temperature distributions in the chips and the walls, and pressure distribution in the fluid. The parameters varied to study the effect of radiation on the cooling of the silicon chips are: Reynolds number, Grashof number, emissivity of the chips and of the inside wall surfaces, chip height, chip width, and the gap between the successive chips. The energy generation rate is such that it gives rise to average heat flux in the chips in the range of 281.25 W/m2 to 1.875×103 W/m2, which is relatively low. The results reveal that there is a 14.28% drop in the dimensionless maximum temperature of the chips at Re = 500, Gr = 8.65 × 105 as compared to the case when the radiation effect is not considered. The increase in emissivity of the chips from 0.1 to 0.9 results in considerable rise in the temperature of the wall opposite to the chips accompanied by a small drop in the chip temperature. The pumping power increases by 82.69% when the chip height is increased from 0.3 to 0.6. However, increasing the chip width results in rise in pumping power by 30%. There is only a marginal drop in pumping power requirement when radiation is considered in the modeling. The novelty of this work lies in the use of realistic chip and wall materials, investigation of the effect of various geometrical parameters, calculation of pressure distribution and pumping power, and reporting of radiation effect on the walls opposite to the chips. This is only work so far which solves the flow, thermal and pressure fields in electronics cooling using stream function-vorticity-temperature approach and applies Gebhart's absorption factor method for calculation of radiation exchange.
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热辐射对安装在垂直通道一侧的低热流密度电子芯片强制空气冷却影响的数值研究
本文对安装在垂直通道左侧的四个相同的矩形硅电子芯片的稳定、层流、二维对流和辐射联合空气冷却进行了数值研究。壁(由铜环氧树脂组成)中的传导以及由于焦耳加热而产生能量的芯片中的传导也被考虑在内。外墙经过绝缘处理。在通道入口处,速度是均匀的。采用基于有限差分的流函数-涡度-温度方法,获得了流体中的流动场和热场、切屑和壁面的温度分布以及流体中的压力分布。研究辐射对硅片冷却影响的参数有:雷诺数、格拉什夫数、硅片和硅片内壁的发射率、硅片高度、硅片宽度和硅片间距。能量产生率使芯片的平均热流密度在281.25 W/m2 ~ 1.875×103 W/m2之间,相对较低。结果表明,在Re = 500, Gr = 8.65 × 105时,芯片的无因次最高温度比不考虑辐射效应时降低了14.28%。芯片的发射率从0.1增加到0.9,导致芯片对面壁面的温度显著升高,同时芯片温度略有下降。当切屑高度由0.3增加到0.6时,抽运功率增加82.69%。然而,增加芯片宽度导致泵浦功率增加30%。在建模中考虑辐射时,泵浦功率需求仅略有下降。这项工作的新颖之处在于使用了真实的芯片和墙壁材料,研究了各种几何参数的影响,计算了压力分布和泵送功率,并报告了芯片对面墙壁的辐射效应。用流函数-涡度-温度法求解电子冷却中的流场、热场和压力场,并应用Gebhart的吸收因子法计算辐射交换,这是迄今为止唯一的工作。
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