M. Kanamura, T. Ohki, T. Kikkawa, K. Imanishi, K. Watanabe, K. Joshin
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引用次数: 7
Abstract
In this paper, we describe the recent progress in GaN HEMT technology for high-frequency and high-power applications. First, we present the GaN HEMT technology for base-station applications. Then, we discuss the current drift phenomena during RF operation. We also present the device technology for normally off GaN HEMTs.
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