F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Hock, T. Hackbarth, H. Herzog, U. Konig
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引用次数: 7
Abstract
Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF and low noise.
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