Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Gongtan Li, Shan Li
{"title":"Performance Improvement of Back-Channel-Etched a-IGZO TFTs by O2 Plasma Treatment","authors":"Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Gongtan Li, Shan Li","doi":"10.1109/CAD-TFT.2018.8608051","DOIUrl":null,"url":null,"abstract":"This work investigates the effects of O2 plasma treatments on the performances of back-channel-etched (BCE) a-IGZO TFT. Results indicate that the O2 plasma treatment significantly improves the subthreshold swing (SS) and the performance stability under the negative gate bias stress. It is suggested that the improvement be attributed to the reduction of indium (In) and the defect state at the back channel surface.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2018.8608051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work investigates the effects of O2 plasma treatments on the performances of back-channel-etched (BCE) a-IGZO TFT. Results indicate that the O2 plasma treatment significantly improves the subthreshold swing (SS) and the performance stability under the negative gate bias stress. It is suggested that the improvement be attributed to the reduction of indium (In) and the defect state at the back channel surface.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
