The tunable plasmonic resonant absorption in grating-gate GaN-based HEMTs for THz detection

Abstract

The plasmonic resonant phenomenon in terahertz wave band for GaN-based high electron mobility transistors is investigated by using finite difference scheme. Strong resonant absorptions can be obtained with large area slit grating-gate serves both as electrodes and coupler. Such kinds of plasmonic resonant detection devices are compatible to the well-developed GaN process, and possibly overcome the difficulty in fabricating ultra-short-gate devices for terahertz applications.