{"title":"Low temperature semiconductor electronics","authors":"R. Jaeger, F. Gaensslen","doi":"10.1109/ITHERM.1988.28689","DOIUrl":null,"url":null,"abstract":"The authors consider that, at any technology level, operation at liquid nitrogen temperature (LNT: 77.3 K) can directly yield a performance improvement exceeding that provided through down-scaling by a factor of two. Thus, MOS technology limits are extended by one generation through LNT operation. Because of its attractive speed, density, and power attributes, liquid-nitrogen-cooled CMOS represents a strategic technology alternative for mainframe computers, an area which has traditionally been the exclusive domain of bipolar technology. A summary of the advantages for MOS microelectronics operated at LNT is presented in a table and discussed.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITHERM.1988.28689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

Abstract

The authors consider that, at any technology level, operation at liquid nitrogen temperature (LNT: 77.3 K) can directly yield a performance improvement exceeding that provided through down-scaling by a factor of two. Thus, MOS technology limits are extended by one generation through LNT operation. Because of its attractive speed, density, and power attributes, liquid-nitrogen-cooled CMOS represents a strategic technology alternative for mainframe computers, an area which has traditionally been the exclusive domain of bipolar technology. A summary of the advantages for MOS microelectronics operated at LNT is presented in a table and discussed.<>
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低温半导体电子学
作者认为,在任何技术水平上,在液氮温度(LNT: 77.3 K)下运行可以直接产生比缩小尺寸两倍的性能改进。因此,通过LNT操作,MOS技术的限制被扩展了一代。由于其极具吸引力的速度、密度和功率特性,液氮冷却CMOS代表了大型计算机的战略技术替代方案,这一领域传统上是双极技术的专属领域。在表中总结了在LNT上工作的MOS微电子器件的优点并进行了讨论。
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