T. Frank, E. Chery, C. Chappaz, L. Arnaud, L. Anghel
{"title":"Through silicon via impact on above BEoL Time Dependent Dielectric Breakdown","authors":"T. Frank, E. Chery, C. Chappaz, L. Arnaud, L. Anghel","doi":"10.1109/IIRW.2012.6468916","DOIUrl":null,"url":null,"abstract":"The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs, processed through a via-middle approach.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2012.6468916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs, processed through a via-middle approach.
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