{"title":"Performance and Large Signal Modelling of a GaAs Heterojunction Bipolar Transistor Mixer at 950MHz","authors":"B. A. Xavier, C. Aitchison","doi":"10.1109/EUMA.1992.335869","DOIUrl":null,"url":null,"abstract":"A GaAs heterojunction bipolar transistor (HBT) single ended active mixer is discussed. Simulations are performed using a large signal HBT model. A novel way of incorporating the d.c equations of an HBT into a large signal simulator is described. Both conversion gain and intermodulation properties are predicted to within ±3dB of measured values. The measured intermodulation performance of the device in a tuned state is superior to both a resistive MESFET and HEMT mixer.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 22nd European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1992.335869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A GaAs heterojunction bipolar transistor (HBT) single ended active mixer is discussed. Simulations are performed using a large signal HBT model. A novel way of incorporating the d.c equations of an HBT into a large signal simulator is described. Both conversion gain and intermodulation properties are predicted to within ±3dB of measured values. The measured intermodulation performance of the device in a tuned state is superior to both a resistive MESFET and HEMT mixer.
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