Simulation of the ionizing radiation effects induced on an ideal NPN vertical BIMOS transistor

Abstract

This paper is related to the study of the ionizing radiation effects induced on an ideal NPN vertical BIMOS transistor. The electrical performances of the vertical BIMOS transistor have already been analysed through simulation, theoretical study and confirmed by an experimental prototype. Thus it is of interest to simulate ionizing radiation effects by introducing /spl Delta/Q/sub ox/, and /spl Delta/D/sub it/. Moreover, through electrical characterization we can separate the two types of defect, /spl Delta/Q/sub ox/, and /spl Delta/D/sub it/ to understand their different effects on device performance and support process qualification.