The 2.4 GHz band SOI-CMOS high power bridge rectifier IC with the cross coupled CMOS pair

Abstract

This paper describes the 2.4GHz band SOI-CMOS high power bridge rectifier IC with the cross coupled CMOS pair (CCP). At first of all, topologies of the rectifier diodes are investigated for improvement of rectifier efficiency and handling power. It is clarified that the CCP has advantages on low threshold and breakdown voltages compared with the gated anode diode (GAD). The developed bridge rectifier IC achieves rectification efficiency of 51% at input power of 25 dBm. This is top efficiency in sub-W class CMOS rectifier ICs.