{"title":"Low-loss hybrid silicon tapers","authors":"P. Pintus, M. Heck, G. Kurczveil, J. Bowers","doi":"10.1109/GROUP4.2011.6053715","DOIUrl":null,"url":null,"abstract":"Two types of hybrid silicon tapers are studied. Single taper loss is 0.3 – 0.5 dB, enabling integration of III/V actives on silicon-on-insulator passive circuitry with low loss. Keywords-Hybrid integration, silicon-on-insulator technology","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Two types of hybrid silicon tapers are studied. Single taper loss is 0.3 – 0.5 dB, enabling integration of III/V actives on silicon-on-insulator passive circuitry with low loss. Keywords-Hybrid integration, silicon-on-insulator technology
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