{"title":"Analysis of High Voltage LDMOS Power Consumption","authors":"Xiulong Wu, Junning Chen, Daoming Ke","doi":"10.1109/ICIEA.2007.4318536","DOIUrl":null,"url":null,"abstract":"According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.","PeriodicalId":231682,"journal":{"name":"2007 2nd IEEE Conference on Industrial Electronics and Applications","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 2nd IEEE Conference on Industrial Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIEA.2007.4318536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.
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