{"title":"A novel dual-SCR ESD protection structure in 0.35-μm SiGe BiCMOS process","authors":"Hou Fei, Liu Nie, Liu Ji-zhi, Liu Zhiwei","doi":"10.1109/INEC.2016.7589453","DOIUrl":null,"url":null,"abstract":"This paper presents a novel dual silicon controlled rectifier (SCR) with silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.35-μm SiGe BiCMOS process. This device includes two back-to-back HBTs with shared sub-collector. Two resistors are connected parallel with base electrode and emitter electrode in each HBT. In order to enhance the protective ability, a layout of multiple emitter fingers shared with one common base are proposed. The TLP test results prove the ability of ESD protection.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a novel dual silicon controlled rectifier (SCR) with silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.35-μm SiGe BiCMOS process. This device includes two back-to-back HBTs with shared sub-collector. Two resistors are connected parallel with base electrode and emitter electrode in each HBT. In order to enhance the protective ability, a layout of multiple emitter fingers shared with one common base are proposed. The TLP test results prove the ability of ESD protection.
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