Modeling and Simulation of Graphene NanoribbonField Effect Transistor (GNRFET)

Abstract

Down scaling of Si MOSFET popular for decades ago for better circuit performance to suites Moore's law. Problem of scaling of Si MOSFET is difficult - reached maximum limit. To address this challenge present day research is focused on identifying new alternative materials and devices that can potentially replace the silicon transistors. Due to the attractive physical properties of Graphene nanoribbon(GNR), research is carried out to use GNR as a channel material for in the next generation integrated circuits and systems for electronic applications. Double gate GNR FET device is modeled and simulated using full quantum transport model in mode space with non Equilibrium Green's functions (NEGF). This paper discusses the physical modelling of double gate GNRFET with different high k dielectric gate oxide materials and investigates the device characteristics for different GNR widths. The obtained results represents that it shows a MOSFET type behaviour. It is also observed that the ION/IOFF ratio of GNRFET with TiO2 as gate dielectric for GNR (13,0) is equal to $2.32\times 10^{3}$ and the ION/IOFF ratio of GNRFET with Hf02 as gate dielectric for GNR (13,0) is equal to $3.74\times 10^{2}$