{"title":"Reliability of Gate Metallization in Power GaAs MESFETs","authors":"K. Katsukawa, Y. Kose, M. Kanamori, S. Sando","doi":"10.1109/IRPS.1984.362020","DOIUrl":null,"url":null,"abstract":"Failure modes have been studied on 0.5 ¿m gate power GaAs MESFETs with Al, Ti/Al and Ti/Al/Ti gate metallization, respectively. It has been found that the dominant failure modes are gate metal disconnection for Al gate, catastrophic burn out for the Ti/Al gate and gate breakdown voltage degradation for the Ti/Al/Ti gate under D.C. operational life tests. The degradation mechanisms have been clarified using SEM, microprobe-AES and SIMS. It is shown that Ti/Al, gate is the most reliable among these three kinds of FETS.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Failure modes have been studied on 0.5 ¿m gate power GaAs MESFETs with Al, Ti/Al and Ti/Al/Ti gate metallization, respectively. It has been found that the dominant failure modes are gate metal disconnection for Al gate, catastrophic burn out for the Ti/Al gate and gate breakdown voltage degradation for the Ti/Al/Ti gate under D.C. operational life tests. The degradation mechanisms have been clarified using SEM, microprobe-AES and SIMS. It is shown that Ti/Al, gate is the most reliable among these three kinds of FETS.
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