{"title":"Simulation and analysis of RF MEMS cantilever switch for low actuation voltage","authors":"A. Khan, T. Shanmuganantham","doi":"10.1109/ICCS1.2017.8325999","DOIUrl":null,"url":null,"abstract":"Nowadays, Radio Frequency (RF) Microelectromechanical system (MEMS) switches are getting more popular in the electronics field. Since consumption of power has become the highest concern in many electronics devices. The main problem for using RF MEMS switches is its high actuation voltage. Thus this paper generally concentrate on the analysis and simulation of RF MEMS metal contact switch having a n-shaped cantilever beam to obtain the low actuation voltage. Simulations are done using the finite element modelling. Intellisuite 8.7v software have been used to get the results of the switch. The design has been revised in terms of thickness of the beam and air gap to carry out electrostatic actuation mechanism. The pull-in voltage is obtained to be 2.6 V.","PeriodicalId":367360,"journal":{"name":"2017 IEEE International Conference on Circuits and Systems (ICCS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS1.2017.8325999","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Nowadays, Radio Frequency (RF) Microelectromechanical system (MEMS) switches are getting more popular in the electronics field. Since consumption of power has become the highest concern in many electronics devices. The main problem for using RF MEMS switches is its high actuation voltage. Thus this paper generally concentrate on the analysis and simulation of RF MEMS metal contact switch having a n-shaped cantilever beam to obtain the low actuation voltage. Simulations are done using the finite element modelling. Intellisuite 8.7v software have been used to get the results of the switch. The design has been revised in terms of thickness of the beam and air gap to carry out electrostatic actuation mechanism. The pull-in voltage is obtained to be 2.6 V.