A Highly-Integrated 20-300V 0.5W Active-Clamp Flyback DCDC Converter with 76.7% Peak Efficiency

Christoph Rindfleisch, Jens Otten, B. Wicht
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引用次数: 2

Abstract

There is a growing need for compact and energy efficient high-voltage (HV) DCDC converters with input voltages >100V for low-power applications up to 500mW. This includes loT and smart-home, supplied from the ac mains, as well as auxiliary supplies for power converters in electrical vehicles and in the field of renewable energy that operate from HV DC-link. Discrete state-of-the-art power supplies are not efficient at light loads below 500mW and are relatively large in size, Fig. 1. They typically use a passive-clamp flyback (PCF) topology (Fig. 1 bottom right) with large external components, such as power switches (QM), HV capacitors $(Cc)$, the output diode $\mathrm{D}_{\text{out}}$, and a transformer $\top$ with up to several millihenries of inductance. The passive clamp topology also suffers from losses due to the leakage inductance $L_{\text{lk}}$ and the hard switching of $\mathrm{Q}_{\mathrm{M}}$. Non-isolated HV DCDC converters with dedicated power topologies [1] achieve good power densities but are not suitable for applications that require galvanic HV isolation. Active clamp flyback (ACF) converters (Fig. 1 bottom left) allow for galvanic isolation while keeping switching losses low. However, ACF designs [2], [3] are usually optimized for high output power and still require large external components. Further, their complex control limits the light-load efficiency. This paper presents a low-power-optimized ACF IC that benefits from integration in a 180nm HV SOI technology. It offers a fully integrated power stage and provides a robust and time-precise control at faster switching speed and more compact size. This way, high light-load efficiency and good power density are achieved.
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高集成度20-300V 0.5W有源箝位反激DCDC变换器,峰值效率76.7%
在500mW以下的低功率应用中,对输入电压>100V的紧凑型节能高压(HV) DCDC转换器的需求日益增长。这包括loT和智能家居,由交流电源供电,以及电动汽车和可再生能源领域的电源转换器的辅助电源,由高压直流链路供电。最先进的分立电源在500mW以下的轻负载下效率不高,而且尺寸相对较大,如图1所示。它们通常使用无源钳位反激(PCF)拓扑结构(图1右下),带有大型外部元件,如功率开关(QM)、高压电容器(Cc)、输出二极管(mathm) (D) (text) (out)和电感高达几毫亨的变压器(top)。由于漏电感$L_{\text{lk}}$和硬开关$\mathrm{Q}_{\mathrm{M}}$,无源钳位拓扑结构也遭受损耗。具有专用电源拓扑的非隔离高压直流变频器[1]具有良好的功率密度,但不适合需要电高压隔离的应用。有源钳位反激(ACF)转换器(图1左下)允许电流隔离,同时保持低开关损耗。然而,ACF设计[2],[3]通常针对高输出功率进行优化,仍然需要大型外部元件。此外,它们复杂的控制限制了轻载效率。本文提出了一种低功耗优化的ACF IC,它得益于集成在180nm高压SOI技术中。它提供了一个完全集成的功率级,提供了一个强大的和时间精确的控制,更快的开关速度和更紧凑的尺寸。这样可以实现高的轻载效率和良好的功率密度。
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